Proceedings/4th. Tri-service cathode workshop, Washington DC, U.S.A., 3-5 April 1984HAAS, T. W.Applied surface science. 1985, Vol 24, Num 3-4, pp 287-598, issn 0169-4332Conference Proceedings

In situ ellipsometric study of As capping and low temperature molecular-beam epitaxy GaAs growth and implications for the low temperature critical thicknessEYINK, K. G; CONG, Y. S; GILBERT, R et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 4, pp 1423-1426, issn 1071-1023Conference Paper

Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C₆₀ and Si effusion cellsLAMPERT, W. V; EITING, C. J; SMITH, S. A et al.Journal of crystal growth. 2002, Vol 234, Num 2-3, pp 369-372, issn 0022-0248Article

Quantification of the surface coverage of Ba and O on W substrates using Auger electron spectroscopy = Quantification du recouvrement superficiel de Ba et de O sur des supports de W à l'aide de spectroscopie électronique AugerEYINK, K. G; LAMARTINE, B. C; LAMPERT, W. V et al.Applications of surface science. 1984, Vol 20, Num 3, pp 215-227, issn 0378-5963Article

Morphology of Al-Ni-Ge ohmic contacts to n-GaAs as a function of contact compositionLIN, X. W; LAMPERT, W. V; SWIDER, W et al.Thin solid films. 1994, Vol 253, Num 1-2, pp 490-495, issn 0040-6090Conference Paper

Deposition and properties of MoS₂ thin films grown by pulsed laser evaporation = Dépôt et propriétés de couches minces de MoS₂ obtenues par évaporation sous laser pulséDONLEY, M. S; MURRAY, P. T; BARBER, S. A et al.Surface & coatings technology. 1988, Vol 36, Num 1-2, pp 329-340, issn 0257-8972Conference Paper

A comparison of the critical thickness for MBE grown LT-GaAs determined by in-situ ellipsometry and transmission electron microscopyEYINK, K. G; CAPANO, M. A; WALCK, S. D et al.Journal of electronic materials. 1997, Vol 26, Num 4, pp 391-396, issn 0361-5235Article

Interfacial reactions in the formation of ohmic contacts to wide bandgap semiconductorsHOLLOWAY, P. H; KIM, T.-J; TREXLER, J. T et al.Applied surface science. 1997, Vol 117-18, pp 362-372, issn 0169-4332Conference Paper

Long-duration exposure facility : preliminary observations of the effects of low earth orbit on MgF₂, ThF₄ and SiO₂ optical materialsJOHN, P. J; DAY, A. E; HAAS, T. W et al.Surface and interface analysis. 1993, Vol 20, Num 6, pp 531-534, issn 0142-2421Article

Use of optical fiber pyrometry in molecular beam epitaxyEYINK, K. G; PATTERSON, J. K; ADAMS, S. J et al.Journal of crystal growth. 1997, Vol 175-76, pp 262-266, issn 0022-0248, 1Conference Paper

Observation of low-T GaAs growth regimes by real-time ellipsometryEYINK, K. G; CONG, Y. S; CAPANO, M. A et al.Journal of electronic materials. 1993, Vol 22, Num 12, pp 1387-1390, issn 0361-5235Article

X-ray analysis of GaAs layers on GaAs(001) and GaAS(111)B surfaces grown at low temperatures by molecular beam epitaxyCAPANO, M. A; YEN, M. Y; EYINK, K. G et al.Applied physics letters. 1991, Vol 58, Num 17, pp 1854-1856, issn 0003-6951Article

Coadsorption of Ba and O on polycrystalline W = Coadsorption de Ba et O sur W polycristallinLAMARTINE, B. C; CZARNECKI, J. V; HAAS, T. W et al.Applied surface science. 1986, Vol 26, Num 1, pp 61-76, issn 0169-4332Article

Strain effects on thermal transitions and mechanical properties of thermoplastic polyurethane elastomersCRAWFORD, D. M; BASS, R. G; HAAS, T. W et al.Thermochimica acta. 1998, Vol 323, Num 1-2, pp 53-63, issn 0040-6031Article

Photoreflectance of Al_xGa_1-xAs/GaAs interfaces and high-electron-mobility transistorsSYDOR, M; JAHREN, N; MITCHEL, W. C et al.Journal of applied physics. 1990, Vol 67, Num 12, pp 7423-7429, issn 0021-8979Article

Dynamics of reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)B GaAs substratesYEN, M. Y; HAAS, T. W.Applied physics letters. 1990, Vol 56, Num 25, pp 2533-2535, issn 0003-6951Article

Photoreflectance measurements of unintentional impurity concentrations in undoped GaAsSYDOR, M; ANGELO, J; MITCHEL, W et al.Journal of applied physics. 1989, Vol 66, Num 1, pp 156-160, issn 0021-8979, 5 p.Article